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32M高温测井用串行 FLASH存储条
发布时间:2012-5-25 阅读:9689

High Temperature 32MB SPI Serial Flash Memory Module

Part Number 32MB08SF-03

Advance Information 02/2012

CMOS   3.3 Volt-only      工作温度( -55度~+175度)

 

Characteristics

Ø  2.7 – 3.6 volt for read and program operations

Ø  SPI Bus Compatible Serial Interface

Ø  Flexible Erase Options – Page, Block, Sector, Chip

Ø  Embedded Erase Algorithms

Ø  Embedded Program Algorithms

Ø  66 MHZ clock rate (Maximum)

Ø  Write Protect pin works with status register to protect portions of memory  

Ø  Low Power Consumption

Ø  Power saving standby mode

Ø  RESET pin pauses serial communication without deselecting device

Ø  Designed for High Temperature Applications

Ø  Nominal Package Dimensions:

2.250” L x 0.600” W x 0.225” H – 0.500” DIP Row Spacing – 0.100” PIN to PIN Spacing


Pin Description

1

NC

36

VCC (3.0 VOLTS)

2

A_H0

35

VCC (3.0 VOLTS)

3

NC

34

#WP

4

A_H1

33

GND

 5

NC

32

#RESET

 6

A_H2

31

GND

 7

NC

30

CLK

 8

NC

29

GND

 9

NC

28

DATA_IN

10

NC

27

GND

11

NC

26

DATA_OUT

12

NC

25

GND

13

CE_L

24

NC

14

NC

23

GND

15

GND

22

NC

16

GND

21

GND

17

NC

20

NC

18

NC

19

NC

 

 Table 1 Signal Description

VCC

Power Supply - + 3 V DC

A_H[2..0]

Address Bus

#RESET

Reset Input – Active Low

#WP

Write Protect Input – Active Low

CLK

Serial Clock Input

DATA_IN

Serial Data Input

DATA_OUT

Serial Data Output

GND

Ground

 

General Description

The Advance Information status indicates that this document contains information on one or more products under development. Do not design in this product without contacting HDA-SMC.

HDA-SMC reserves the right to change or discontinue work on this product without notice.

 

The Flash Memory Module 32MB08SF contains 8 Serial Flash Memory ICs. The address bus pins are provided to activate individual chip enable inputs on each IC.. Each flash memory device can be read in a random access manner. Writes, however, are done on a byte-by-byte basis and strict write procedures need to be followed. Before writing to a location in memory, that memory must first be erased.  This can be done on a sector basis, or it can be done on a chip wide basis. It is possible to program the individual memory chips to enter erase cycles at the same time.  Care should be taken that the thermal limits of the device are not exceeded and that the power supply can provide the necessary current.  It is recommended that the chips be individually erased.  It is also possible to have more than one chip in a write mode at the same time. Care should be taken when causing more than one chip to be in the write state.

   

Ordering Information

 

32MB08SF-03  Through Hole 36 Pin DIP Package

 

需要样品及测试请联络:  13319188366

 


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